TY  - CHAP
U1  - Konferenzveröffentlichung
A1  - Rajab, Mohammed
A1  - Thiers, Johann-Philipp
A1  - Freudenberger, Jürgen
T1  - Read threshold calibration for non-volatile flash memories
T2  - 9th International Conference on Consumer Electronics (ICCE Berlin), 8-11 Sept. 2019, Berlin, Germany
N2  - The introduction of multi level cell (MLC) and triple level cell (TLC) technologies reduced the reliability of flash memories significantly compared with single level cell (SLC) flash. The reliability of the flash memory suffers from various errors causes. Program/erase cycles, read disturb, and cell to cell interference impact the threshold voltages. With pre-defined fixed read thresholds a voltage shift increases the bit error rate (BER). This work proposes a read threshold calibration method that aims on minimizing the BER by adapting the read voltages. The adaptation of the read thresholds is based on the number of errors observed in the codeword protecting a small amount of meta-data. Simulations based on flash measurements demonstrate that this method can significantly reduce the BER of TLC memories.
Y1  - 2019
SN  - 978-1-7281-2745-3
SB  - 978-1-7281-2745-3
SN  - 978-1-7281-2775-0
SB  - 978-1-7281-2775-0
U6  - https://doi.org/10.1109/ICCE-Berlin47944.2019.8966181
DO  - https://doi.org/10.1109/ICCE-Berlin47944.2019.8966181
N1  - Volltextzugriff für Angehörige der Hochschule Konstanz möglich
SP  - 109
EP  - 113
PB  - IEEE
ER  -