TY  - CHAP
U1  - Konferenzveröffentlichung
A1  - Bailon, Daniel Nicolas
A1  - Shavgulidze, Sergo
A1  - Freudenberger, Jürgen
T1  - Features for Read Reference Voltage Estimation in NAND Flash Memory
T2  - 13th International Conference on Consumer Electronics (ICCE-Berlin), 3.-5. Sept. 2023, Berlin, Germany
N2  - Reliability is a crucial aspect of non-volatile NAND flash memories, and it is essential to thoroughly analyze the channel to prevent errors and ensure accurate readout. Es-timating the read reference voltages (RRV s) is a significant challenge due to the multitude of physical effects involved. The question arises which features are useful and necessary for the RRV estimation. Various possible features require specialized hardware or specific readout techniques to be usable. In contrast we consider sparse histograms based on the decision thresholds for hard-input and soft-input decoding. These offer a distinct advantage as they are derived directly from the raw readout data without the need for decoding. This paper focuses on the information-theoretic study of different features, especially on the exploration of the mutual information (MI) between feature vector and RRV. In particular, we investigate the dependency of the MI on the resolution of the histograms. With respect to the RRV estimation, sparse histograms provide sufficient information for near-optimum estimation.
Y1  - 2023
SN  - 979-8-3503-2415-0
SB  - 979-8-3503-2415-0
SN  - 979-8-3503-2416-7
SB  - 979-8-3503-2416-7
U6  - https://doi.org/10.1109/ICCE-Berlin58801.2023.10375586
DO  - https://doi.org/10.1109/ICCE-Berlin58801.2023.10375586
N1  - Volltextzugriff für Angehörige der Hochschule Konstanz via Datenbank IEEE Xplore möglich
SP  - 6
S1  - 6
PB  - IEEE
ER  -