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Enhancing Reliability and Efficiency in Flash Memory: Readout Methods and Error Correction Algorithms

  • Flash memory is essential in modern electronics due to its fast access, high storage density, and cost-effectiveness. As the demand for expanded local storage capacity continues, its appliance is increasing. This work primarily focuses on enhancing the reliability of flash memories. It begins with a comprehensive characterization of the flash channel, identifying and analyzing various sources of errors. The study delves into different bit-labeling schemes and investigates the achievable capacities associated with them. Additionally, the importance of read reference voltages is explained, particularly in adapting them to the life-cycle condition. The thesis also introduces calibration and adaptation algorithms for this purpose. The challenges related to error correction codes are addressed extensively, focusing on algorithms designed to reduce decoding complexity. The research delves into low-complexity decoding techniques, particularly for scenarios involving small code lengths. Another area of investigation is concatenated codes based on small cyclic codes. Furthermore, the thesis explores the advantages of joint processing of NAND flash pages, highlighting improvements in hard-decision decoding to minimize the need for additional read-out operations. This joint processing approach is thoroughly compared with conventional processing methods to assess its effectiveness and potential benefits. Overall, this thesis contributes to enhancing the reliability of flash memories while proposing optimizations for their decoding processes.

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Metadaten
Author:Daniel Nicolas BailonORCiD
DOI:https://doi.org/10.18725/OPARU-53895
Publisher:Universität Ulm
Place of publication:Ulm
Referee:Jürgen FreudenbergerORCiDGND, Stefan ten Brink, Martin BossertORCiD
Advisor:Jürgen Freudenberger
Document Type:Doctoral Thesis
Language:English
Year of Publication:2024
Granting Institution:Universität Ulm
Date of final exam:2024/06/10
Release Date:2024/10/17
Tag:Flash memory
Page Number:XXX, 140
Institutes:Institut für Systemdynamik - ISD
DDC functional group:620 Ingenieurwissenschaften und zugeordnete Tätigkeitenn
Open Access?:Ja
Relevance:Abgeschlossene Dissertation
Licence (German):License LogoCreative Commons - CC BY - Namensnennung 4.0 International