Volltext-Downloads (blau) und Frontdoor-Views (grau)
  • search hit 12 of 16
Back to Result List

Estimation of channel state information for non-volatile flash memories

  • Error correction coding based on soft-input decoding can significantly improve the reliability of flash memories. Such soft-input decoding algorithms require reliability information about the state of the memory cell. This work proposes a channel model for soft-input decoding that considers the asymmetric error characteristic of multi-level cell (MLC) and triple-level cell (TLC) memories. Based on this model, an estimation method for the channel state information is devised which avoids additional pilot data for channel estimation. Furthermore, the proposed method supports page-wise read operations.

Export metadata

Additional Services

Search Google Scholar

Statistics

frontdoor_oas
Metadaten
Author:Jürgen FreudenbergerORCiDGND, Mohammed RajabORCiD, Sergo ShavgulidzeORCiD
DOI:https://doi.org/10.1109/ICCE-Berlin.2017.8210594
ISBN:978-1-5090-4015-5
ISBN:978-1-5090-4014-8
Parent Title (English):7th International Conference on Consumer Electronics - Berlin (ICCE-Berlin), 3-6 Sept. 2017, Berlin, Germany
Publisher:IEEE
Document Type:Conference Proceeding
Language:English
Year of Publication:2017
Release Date:2019/07/31
Tag:Channel estimation; Decoding; Error correction codes; Flash memories; Integrated circuit reliability
First Page:69
Last Page:73
Note:
Volltextzugriff für Hochschulangehörige via Datenbank IEEE Xplore
Institutes:Institut für Systemdynamik - ISD
Relevance:Keine peer reviewed Publikation (Wissenschaftlicher Artikel und Aufsatz, Proceeding, Artikel in Tagungsband)
Open Access?:Nein
Licence (German):License LogoUrheberrechtlich geschützt