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A Source and Channel Coding Approach for Improving Flash Memory Endurance

  • The introduction of multiple-level cell (MLC) and triple-level cell (TLC) technologies reduced the reliability of flash memories significantly compared with single-level cell flash. With MLC and TLC flash cells, the error probability varies for the different states. Hence, asymmetric models are required to characterize the flash channel, e.g., the binary asymmetric channel (BAC). This contribution presents a combined channel and source coding approach improving the reliability of MLC and TLC flash memories. With flash memories data compression has to be performed on block level considering short-data blocks. We present a coding scheme suitable for blocks of 1 kB of data. The objective of the data compression algorithm is to reduce the amount of user data such that the redundancy of the error correction coding can be increased in order to improve the reliability of the data storage system. Moreover, data compression can be utilized to exploit the asymmetry of the channel to reduce the error probability. With redundant data, the proposed combined coding scheme results in a significant improvement of the program/erase cycling endurance and the data retention time of flash memories.

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Metadaten
Author:Jürgen FreudenbergerORCiDGND, Mohammed RajabORCiD, Sergo ShavgulidzeORCiD
URL:https://ieeexplore.ieee.org/document/8290563
DOI:https://doi.org/10.1109/TVLSI.2018.2797078
ISSN:1557-9999
Parent Title (English):IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume:26
Document Type:Article
Language:English
Year of Publication:2018
Release Date:2018/12/20
Issue:5
First Page:981
Last Page:990
Note:
Volltextzugriff für Angehörige der Hochschule Konstanz via Datenbank IEEE Xplore möglich.
Institutes:Institut für Systemdynamik - ISD
Open Access?:Nein
Relevance:Peer reviewed Publikation in Thomson-Reuters-Listung
Licence (English):License LogoLizenzbedingungen IEEE