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Estimation of channel state information for non-volatile flash memories

  • Error correction coding based on soft-input decoding can significantly improve the reliability of flash memories. Such soft-input decoding algorithms require reliability information about the state of the memory cell. This work proposes a channel model for soft-input decoding that considers the asymmetric error characteristic of multi-level cell (MLC) and triple-level cell (TLC) memories. Based on this model, an estimation method for the channel state information is devised which avoids additional pilot data for channel estimation. Furthermore, the proposed method supports page-wise read operations.

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Author:Jürgen FreudenbergerORCiDGND, Mohammed RajabORCiD, Sergo ShavgulidzeORCiD
Parent Title (English):7th International Conference on Consumer Electronics - Berlin (ICCE-Berlin), 3-6 Sept. 2017, Berlin, Germany
Document Type:Conference Proceeding
Year of Publication:2017
Release Date:2019/07/31
Tag:Channel estimation; Decoding; Error correction codes; Flash memories; Integrated circuit reliability
First Page:69
Last Page:73
Volltextzugriff für Hochschulangehörige via Datenbank IEEE Xplore
Institutes:Institut für Systemdynamik - ISD
Relevance:Keine peer reviewed Publikation (Wissenschaftlicher Artikel und Aufsatz, Proceeding, Artikel in Tagungsband)
Open Access?:Nein
Licence (English):License LogoLizenzbedingungen IEEE