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Read threshold calibration for non-volatile flash memories

  • The introduction of multi level cell (MLC) and triple level cell (TLC) technologies reduced the reliability of flash memories significantly compared with single level cell (SLC) flash. The reliability of the flash memory suffers from various errors causes. Program/erase cycles, read disturb, and cell to cell interference impact the threshold voltages. With pre-defined fixed read thresholds a voltage shift increases the bit error rate (BER). This work proposes a read threshold calibration method that aims on minimizing the BER by adapting the read voltages. The adaptation of the read thresholds is based on the number of errors observed in the codeword protecting a small amount of meta-data. Simulations based on flash measurements demonstrate that this method can significantly reduce the BER of TLC memories.

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Author:Mohammed RajabORCiD, Johann-Philipp ThiersORCiD, Jürgen FreudenbergerORCiDGND
Parent Title (English):9th International Conference on Consumer Electronics (ICCE Berlin), 8-11 Sept. 2019, Berlin, Germany
Document Type:Conference Proceeding
Year of Publication:2019
Release Date:2020/01/13
First Page:109
Last Page:113
Volltextzugriff für Angehörige der Hochschule Konstanz möglich
Institutes:Institut für Systemdynamik - ISD
DDC functional group:000 Allgemeines, Informatik, Informationswissenschaft
Relevance:Keine peer reviewed Publikation (Wissenschaftlicher Artikel und Aufsatz, Proceeding, Artikel in Tagungsband)
Open Access?:Nein
Licence (German):License LogoUrheberrechtlich geschützt