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Error correction coding based on soft-input decoding can significantly improve the reliability of flash memories. Such soft-input decoding algorithms require reliability information about the state of the memory cell. This work proposes a channel model for soft-input decoding that considers the asymmetric error characteristic of multi-level cell (MLC) and triple-level cell (TLC) memories. Based on this model, an estimation method for the channel state information is devised which avoids additional pilot data for channel estimation. Furthermore, the proposed method supports page-wise read operations.
These days computer analysis of ECG (Electrocardiograms) signals is common. There are many real-time QRS recognition algorithms; one of these algorithms is Pan-Tompkins Algorithm. Which the Pan-Tompkins Algorithm can detect QRS complexes of ECG signals. The proposed algorithm is analysed the data stream of the heartbeat based on the digital analysis of the amplitude, the bandwidth, and the slope. In addition to that, the stress algorithm compares whether the current heartbeat is similar or different to the last heartbeat after detecting the ECG signals. This algorithm determines the stress detection for the patient on the real-time. In order to implement the new algorithm with higher performance, the parallel programming language CUDA is used. The algorithm determines stress at the same time by determining the RR interval. The algorithm uses a different function as beat detector and a beat classifier of stress.
Embodiments are generally related to the field of channel and source coding of data to be sent over a channel, such as a communication link or a data memory. Some specific embodiments are related to a method of encoding data for transmission over a channel, a corresponding decoding method, a coding device for performing one or both of these methods and a computer program comprising instructions to cause said coding device to perform one or both of said methods.
The introduction of multi level cell (MLC) and triple level cell (TLC) technologies reduced the reliability of flash memories significantly compared with single level cell (SLC) flash. The reliability of the flash memory suffers from various errors causes. Program/erase cycles, read disturb, and cell to cell interference impact the threshold voltages. With pre-defined fixed read thresholds a voltage shift increases the bit error rate (BER). This work proposes a read threshold calibration method that aims on minimizing the BER by adapting the read voltages. The adaptation of the read thresholds is based on the number of errors observed in the codeword protecting a small amount of meta-data. Simulations based on flash measurements demonstrate that this method can significantly reduce the BER of TLC memories.
Error correction coding based on soft-input decoding can significantly improve the reliability of non-volatile flash memories. This work proposes a soft-input decoder for generalized concatenated (GC) codes. GC codes are well suited for error correction in flash memories for high reliability data storage. We propose GC codes constructed from inner extended binary Bose-Chaudhuri-Hocquenghem (BCH) codes and outer Reed-Solomon codes. The extended BCH codes enable an efficient hard-input decoding. Furthermore, a low-complexity soft-input decoding method is proposed. This bit-flipping decoder uses a fixed number of test patterns and an algebraic decoder for soft-decoding. An acceptance criterion for the final candidate codeword is proposed. Combined with error and erasure decoding of the outer Reed-Solomon codes, this acceptance criterion can improve the decoding performance and reduce the decoding complexity. The presented simulation results show that the proposed bit-flipping decoder in combination with outer error and erasure decoding can outperform maximum likelihood decoding of the inner codes.