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The growing error rates of triple-level cell (TLC) and quadruple-level cell (QLC) NAND flash memories have led to the application of error correction coding with soft-input decoding techniques in flash-based storage systems. Typically, flash memory is organized in pages where the individual bits per cell are assigned to different pages and different codewords of the error-correcting code. This page-wise encoding minimizes the read latency with hard-input decoding. To increase the decoding capability, soft-input decoding is used eventually due to the aging of the cells. This soft-decoding requires multiple read operations. Hence, the soft-read operations reduce the achievable throughput, and increase the read latency and power consumption. In this work, we investigate a different encoding and decoding approach that improves the error correction performance without increasing the number of reference voltages. We consider TLC and QLC flashes where all bits are jointly encoded using a Gray labeling. This cell-wise encoding improves the achievable channel capacity compared with independent page-wise encoding. Errors with cell-wise read operations typically result in a single erroneous bit per cell. We present a coding approach based on generalized concatenated codes that utilizes this property.
The reliability of flash memories suffers from various error causes. Program/erase cycles, read disturb, and cell to cell interference impact the threshold voltages and cause bit errors during the read process. Hence, error correction is required to ensure reliable data storage. In this work, we investigate the bit-labeling of triple level cell (TLC) memories. This labeling determines the page capacities and the latency of the read process. The page capacity defines the redundancy that is required for error correction coding. Typically, Gray codes are used to encode the cell state such that the codes of adjacent states differ in a single digit. These Gray codes minimize the latency for random access reads but cannot balance the page capacities. Based on measured voltage distributions, we investigate the page capacities and propose a labeling that provides a better rate balancing than Gray labeling.
Soft-input decoding of concatenated codes based on the Plotkin construction and BCH component codes
(2020)
Low latency communication requires soft-input decoding of binary block codes with small to medium block lengths.
In this work, we consider generalized multiple concatenated (GMC) codes based on the Plotkin construction. These codes are similar to Reed-Muller (RM) codes. In contrast to RM codes, BCH codes are employed as component codes. This leads to improved code parameters. Moreover, a decoding algorithm is proposed that exploits the recursive structure of the concatenation. This algorithm enables efficient soft-input decoding of binary block codes with small to medium lengths. The proposed codes and their decoding achieve significant performance gains compared with RM codes and recursive GMC decoding.
Reed-Muller (RM) codes have recently regained some interest in the context of low latency communications and due to their relation to polar codes. RM codes can be constructed based on the Plotkin construction. In this work, we consider concatenated codes based on the Plotkin construction, where extended Bose-Chaudhuri-Hocquenghem (BCH) codes are used as component codes. This leads to improved code parameters compared to RM codes. Moreover, this construction is more flexible concerning the attainable code rates. Additionally, new soft-input decoding algorithms are proposed that exploit the recursive structure of the concatenation and the cyclic structure of the component codes. First, we consider the decoding of the cyclic component codes and propose a low complexity hybrid ordered statistics decoding algorithm. Next, this algorithm is applied to list decoding of the Plotkin construction. The proposed list decoding approach achieves near-maximum-likelihood performance for codes with medium lengths. The performance is comparable to state-of-the-art decoders, whereas the complexity is reduced.
The performance and reliability of non-volatile NAND flash memories deteriorate as the number of program/erase cycles grows. The reliability also suffers from cell to cell interference, long data retention time, and read disturb. These processes effect the read threshold voltages. The aging of the cells causes voltage shifts which lead to high bit error rates (BER) with fixed pre-defined read thresholds. This work proposes two methods that aim on minimizing the BER by adjusting the read thresholds. Both methods utilize the number of errors detected in the codeword of an error correction code. It is demonstrated that the observed number of errors is a good measure for the voltage shifts and is utilized for the initial calibration of the read thresholds. The second approach is a gradual channel estimation method that utilizes the asymmetrical error probabilities for the one-to-zero and zero-to-one errors that are caused by threshold calibration errors. Both methods are investigated utilizing the mutual information between the optimal read voltage and the measured error values.
Numerical results obtained from flash measurements show that these methods reduce the BER of NAND flash memories significantly.