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The introduction of multi level cell (MLC) and triple level cell (TLC) technologies reduced the reliability of flash memories significantly compared with single level cell (SLC) flash. The reliability of the flash memory suffers from various errors causes. Program/erase cycles, read disturb, and cell to cell interference impact the threshold voltages. With pre-defined fixed read thresholds a voltage shift increases the bit error rate (BER). This work proposes a read threshold calibration method that aims on minimizing the BER by adapting the read voltages. The adaptation of the read thresholds is based on the number of errors observed in the codeword protecting a small amount of meta-data. Simulations based on flash measurements demonstrate that this method can significantly reduce the BER of TLC memories.
Today, many resource-constrained systems, such as embedded systems, still rely on symmetric cryptography for authentication and digital signatures. Asymmetric cryptography provide a higher security level, but software implementations of public-key algorithms on small embedded systems are extremely slow. Hence, such embedded systems require hardware assistance, i.e. crypto coprocessors optimized for public key operations. Many such coprocessor designs aim on high computational performance. In this work, an area efficient elliptic curve cryptography (ECC) coprocessor is presented for applications in small embedded systems where high performance coprocessors are too costly. We propose a simple control unit with a small instruction set that supports different ECC point multiplication (PM) algorithms. The control unit reduces the logic and number of registers compared with other implementations of ECC point multiplications.